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| HFA60EA120P Vishay High Power Products HEXFRED(R) Ultrafast Soft Recovery Diode, 60 A FEATURES 3 1 * Fast recovery time characteristic * Electrically isolated base plate * Antiparallel diodes * Large creepage distance between terminal * Simplified mechanical designs, rapid assembly SOT-227 2 4 * UL pending * Totally lead (Pb)-free * Designed and qualified for industrial level PRODUCT SUMMARY VR VF (typical) trr (typical) IF(DC) at TC 1200 V 2.2 V 145 ns 30 A at 120 C DESCRIPTION/APPLICATIONS This SOT-227 modules with HEXFRED(R) rectifier are in antiparallel configuration. The antiparallel configuration is used for simple series rectifier and high voltage application. The semiconductor in the SOT-227 package is isolated from the copper base plate, allowing for common heatsinks and compact assemblies to be built. These modules are intended for general applications such as HV power supplies, electronic welders, motor control and inverters. ABSOLUTE MAXIMUM RATINGS PARAMETER Cathode to anode voltage Continuous forward current Single pulse forward current Maximum repetitive forward current Maximum power dissipation RMS isolation voltage Operating junction and storage temperature range SYMBOL VR IF IFSM IFRM PD VISOL TJ, TStg TC = 120 C TJ = 25 C Rated VR, square wave, 20 kHz, TC = 60 C TC = 25 C TC = 100 C Any terminal to case, t = 1 minute TEST CONDITIONS MAX. 1200 30 350 130 312 125 2500 - 55 to + 150 W V C A UNITS V ELECTRICAL SPECIFICATIONS (TJ = 25 C unless otherwise specified) PARAMETER Cathode to anode breakdown voltage SYMBOL VBR TEST CONDITIONS IR = 100 A IF = 30 A Forward voltage VFM IF = 60 A IF = 60 A, TJ = 150 C Reverse leakage current IRM VR = VR rated TJ = 150 C, VR = VR rated MIN. 1200 TYP. 2.2 2.7 2.1 2.0 2.7 MAX. 3.0 3.8 75 10 A mA V UNITS Document Number: 94610 Revision: 17-Oct-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 1 HFA60EA120P Vishay High Power Products HEXFRED(R) Ultrafast Soft Recovery Diode, 60 A TEST CONDITIONS TJ = 25 C TJ = 125 C TJ = 25 C TJ = 125 C TJ = 25 C TJ = 125 C IF = 50 A dIF/dt = - 200 A/s VR = 200 V MIN. TYP. 145 218 13 19 910 1920 MAX. UNITS ns DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 C unless otherwise specified) PARAMETER Reverse recovery time SYMBOL trr Peak recovery current IRRM Qrr A Reverse recovery charge nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Junction to case, single leg conducting Junction to case, both legs conducting Case to heatsink Weight Mounting torque SYMBOL RthJC RthCS Flat, greased and surface TEST CONDITIONS MIN. TYP. 0.05 30 1.3 MAX. 0.4 0.2 g Nm C/W UNITS www.vishay.com 2 For technical questions, contact: ind-modules@vishay.com Document Number: 94610 Revision: 17-Oct-08 HFA60EA120P HEXFRED(R) Ultrafast Soft Recovery Diode, 60 A 1000 Instantaneous Forward Current - IF (A) Vishay High Power Products 10 150C 100 Reverse Current - IR (mA) 1 125C 0.1 0.01 25C 0.001 10 Tj = 150C Tj = 125C Tj = 25C 1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Forward Voltage Drop - VFM (V) 0.0001 200 400 600 800 1000 1200 Reverse Voltage - VR (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 1 Thermal Impedance ZthJC (C/W) D = 0.75 D = 0.5 0.1 D = 0.33 D = 0.25 D = 0.2 0.01 Single Pulse (Thermal Resistance) 0.001 0.0001 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 t1, Rectangular Pulse Duration (Seconds) Fig. 3 - Maximum Thermal Impedance ZthJC Characteristics 160 Allowable Case Temperature (C) Average Power Loss - (Watts) 300 250 200 150 100 50 0 180 120 90 60 30 140 120 100 80 60 40 20 0 0 20 40 60 80 100 Average Forward Current - IF(AV) (A) Square wave (D=0.50) 80% rated Vr applied see note (1) DC DC RMS Limit 0 20 40 60 80 100 Average Forward Current - IF(AV) (A) Fig. 4 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 5 - Forward Power Loss Characteristics Document Number: 94610 Revision: 17-Oct-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 3 HFA60EA120P Vishay High Power Products HEXFRED(R) Ultrafast Soft Recovery Diode, 60 A 3000 Vr = 200V 300 Vr = 200V 250 If = 50A, Tj = 125C 2500 If = 50A, Tj = 125C 2000 Q rr (nC) t rr (ns) 200 If = 50A, Tj = 25C 1500 If = 50A, Tj = 25C 150 1000 500 0 100 100 50 100 1000 1000 dIF /dt (A/s) dIF /dt (A/s) Fig. 6 - Typical Reverse Recovery Time vs. dIF/dt Fig. 7 - Typical Stored Charge vs. dIF/dt 40 Vr = 200V 30 If = 50A, Tj = 125C I rr (A) 20 If = 50A, Tj = 25C 10 0 100 1000 dIF /dt (A/s) Fig. 8 - Typical Peak Recovery Current vs. dIF/dt Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 5); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR www.vishay.com 4 For technical questions, contact: ind-modules@vishay.com Document Number: 94610 Revision: 17-Oct-08 HFA60EA120P HEXFRED(R) Ultrafast Soft Recovery Diode, 60 A VR = 200 V Vishay High Power Products 0.01 L = 70 H D.U.T. dIF/dt adjust D G IRFP250 S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) IF 0 trr ta tb Qrr (2) (4) IRRM 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Document Number: 94610 Revision: 17-Oct-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 5 HFA60EA120P Vishay High Power Products ORDERING INFORMATION TABLE HEXFRED(R) Ultrafast Soft Recovery Diode, 60 A Device code HF 1 1 2 3 4 5 6 - A 2 60 3 EA 4 120 5 P 6 HEXFRED(R) family Process designator (A = Electron irradiated) Average current (60 = 60 A) Package outline (EA = SOT-227, 2 diodes antiparallel) Voltage rating (120 = 1200 V) P = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions Packaging information http://www.vishay.com/doc?95036 http://www.vishay.com/doc?95037 www.vishay.com 6 For technical questions, contact: ind-modules@vishay.com Document Number: 94610 Revision: 17-Oct-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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